RTP tube furnace is a UL certifiable compact rapid thermal processing tube (4″ I.D.) furnace with High Vacuum Station (diaphragm pump + turbo molecular pump) and KF-D25 vacuum flange assembly. It is designed for annealing semiconductor wafer or solar cell up to 3″ diameter. The furnace is heated by 8 units of 1KW halogen light around the processing tube with a max. heating rate of max. 50C/second. 50 segments precision temperature controller is built in with accuracy +/-1° C. RTP Rapid annealing tube furnace is designed for annealing semiconductor wafer or solar cell
| Model No. | CY-O1200-50IRTP |
| Display | 7” LCD Touch Panel |
| Limiting temperature | 1150℃ |
| Working temperature | ≤1100℃ |
| Heating rate | 0-100℃/min |
| Heating Zone length | 400mm, constant temperature zone200mm |
| Corundum tube diameter | OD50*1200mm |
| Temperature accuracy | ± 1℃ |
| Heating element | Alchrome |
| Thermal couple | K TYPE |
| Cooling method | Double layer structure with fan cooling |
| Temperature control | 30 steps programmable PID control |
| Chamber material | Alumina fiber |
| Over-temperature alarm | Yes |
| Over-current alarm | Yes |
| Sealing flange | S.S vacuum flange |
| Sliding method | Manual sliding |
| Cooling method | air forced cooling |
| Gas mixer | One way with Float Flow Controller |
| Main Power | 4.5Kw |
| Working voltage | AC220V,50Hz |
tube furnace is heated by halogen light around the processing tube with a max. heating rate of max. 300°C/min. 30 segment precision temperature controller with +/-1ºC accuracy is built into the furnace to allow for heating, dwelling, and cooling at various steps.
annealing tube furnace is designed for annealing semiconductor wafer or solar cell.Can be customized according to your needs.can choose according to the annealing tube furnace image and the table parameters in detail, and then contact us to get the price